lab seme 2N2222A semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. document number 3554 issue 1 high speed medium power, npn switching transistor features ? silicon planar epitaxial npn transistor ? high speed saturated switching ? also available in ceramic surface mount package v cbo collector ? base voltage v ceo collector ? emitter voltage v ebo emitter ? base voltage i c collector current p d total device dissipation @ t a = 25c derate above 25c p d total device dissipation @ t c = 25c derate above 25c t j operating junction temperature t stg storage junction temperature range 75v 40v 6v 800ma 0.5w 3.33mw / c 1.8w 12.05mw / c 175c ?65 to +200c mechanical data dimensions in mm (inches) to?18 metal package (to-206aa) absolute maximum ratings (t a = 25c unless otherwise stated) pin 1 ? emitter underside view pin 2 ? base pin 3 ? collector
parameter test conditions min. typ. max. unit f t transition frequency 2 c ob output capacitance c ib input capacitance h fe small signal current gain t d delay time t r rise time t s storage time t f fall time i c = 20ma v ce = 20v f = 100mhz v cb = 10v i e = 0 f = 100khz v eb = 0.5v i c = 0 f = 100khz i c = 1ma v ce = 10v f = 1khz i c = 10ma v ce = 10v f = 1khz v cc = 30v v be(off) = 0.5v i c = 150ma i b1 = 15ma v cc = 30v i c = 150ma i b1 = i b2 = 15ma lab seme 2N2222A semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. document number 3554 issue 1 i c = 10ma i b = 0 i c = 10 ai e = 0 i e = 10 ai c = 0 v ce = 60v v eb(off) = 3v i e = 0 v cb = 60v t a = 150c i c = 0 v eb = 3v v ce = 60v v eb(off) = 3v i c = 150ma i b = 15ma i c = 500ma i b = 50ma i c = 150ma i b = 15ma i c = 500ma i c = 50ma i c = 0.1ma v ce = 10v i c = 1ma v ce = 10v i c = 10ma v ce = 10v t a = ?55c i c = 150ma v ce = 10v 1 i c = 150ma v ce = 1v 1 i c = 500ma v ce = 10v 1 electrical characteristics (t a = 25c unless otherwise stated) v (br)ceo collector ? emitter sustaining voltage v (br)cbo collector ? base breakdown voltage v (br)ebo emitter ? base breakdown voltage i cex collector cut-off current i cbo collector ? base cut-off current i ebo emitter cut-off current (i c = 0) i bl base current v ce(sat) 1 collector ? emitter saturation voltage v be(sat) 1 base ? emitter saturation voltage h fe dc current gain 40 75 6 10 0.01 10 10 20 0.3 1 0.6 1.2 2 35 50 75 35 100 300 50 40 300 8 25 50 300 75 375 10 25 225 60 v v v na a na na v v ? mhz pf ? ns ns notes: 1) pulse test: t p 300 s , 2% 2) f t is defined as the frequency at which h fe extrapolates to unity. off characteristics on characteristics small signal characteristics switching characteristics
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